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Vertical Electron Beam Evaporator

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Application


The small dimensions and the vertical evaporator design open the path to a new range of applications:

In standard MBE systems and the majority of home-made UHV chambers there are often no horizontal ports designated for typical e-beam evaporators. Here the compact design of the EBVV allows the integration of a powerful electron beam evaporator into virtually every UHV growth system.

The EBVV closes the gap between small rod-fed e-guns, usually providing very low fluxes and only suitable for sublimating evaporants, and common horizontally mounted e-beam evaporators, which often are excessively space-consuming and far overrated for most MBE applications. EBVV evaporators may even be a good alternative to radiation heated high temperature sources running into their flux. temperature or purity limits

The EBVV is the ideal evaporator for any low or very low vapor pressure material, including refractory metals or dopants like, for example, boron or carbon. It can also serve the upcoming demands in newly developed material systems like high-k materials (Al2O3 or Pr3O3) or other oxides and dielectrics.

For metal deposition the EBVV 63-4 can be used with bare copper hearth, in particular for all metals that do not melt completely (e.g., Al) or that are not reacting with the cooled copper wall. Crucible liners manufactured from graphite or refractory metals are available for other materials.

Please inquire about a solution for your particular evaporation material.

For Boron doping applications we offer the specialized e-beam evaporator type EBVV-B.

SiGe MBE is another key application for the EBVV. For Si growth in an MBE system the use of the EBVV 63-5 is recommended because hearth capacity and geometry are optimized for this special application.

A set of specially adapted shielding parts manufactured from high purity single-crystalline Si is available for this model. All parts of the metallic body that are potentially subject to electron or ion bombardment and that face the substrate are covered by a top Si plate and ring.

This kind of shielding is a qualification for the growth of highest purity Si-based films with virtually no metallic contamination. The set is complemented by a high purity Si charge, source material in superior quality machined from wafer-grade Si single crystals, that fits the hearth closely.

CONTACT US

Contact: Nana Zhang

Phone: 18201230727

Tel: 010-80698356

Email: Info@be-instruments.com

Add: Room 1310, AirChina Plaza, No. 36 Xiaoyun Road, Chaoyang District, Beijing