Phosphorus Doping Source-DECO-D

Typical applications of our DECO-D phosporus doping source are high level and sharp delta-doping with Phosphorus in Si/SiGe MBE. Small crucible charges, large double layer shutters, integrated water cooling and reduced shielding allow a fast shutdown of the cell after the doping. High 1020/cm³ doping and sharp delta-doping have been reported in literature applying the DECO-D from MBE-Komponenten GmbH. Due to its small dimensions and easy operation the DECO-D is ideally suited for all types of MBE systems.

Features:

operating temperatures 900-1200°C for growth applications

precise adjustment of P2 incorporation into GaAsP. GalnAsP, etc., compound layers

P2/P4 ratio about 150 : 1

very low parasitic Ga flux (P : Ga > 105);

(P : Ga > 103 without Ga-Trapping Cap Unit)

High efficiency: about 20 g P in GaP for 100µm film thickness

Marginal white phosphorus accumulation in MBE system

No additional safety facilities needed in contrast to PH3, AsH3 or valved elemental phosporus crackers

No bakeout necessary before opening the system

Compatible with standard III/V solid source MBE