Substrate Manipulators-SH

SH/SH-O substrate manipulators are used in standard III-V MBE, GaN MBE, SiC growth and SiGe MBE. Manipulators with tungsten heaters are applicable for the majority of high temperature applications. In III-V MBE tantalum wire heaters are usually recommended, while SiGe MBE requires pyrolytic graphite heaters. All heater concepts provide clean UHV growth conditions even at elevated operating temperatures up to 1200°C.

Heater type : tungsten wire (W), tantalum wire (T), pyrolytic graphite (G); (special heater materials like silicon carbide, platinum, pbn encapsulated on request)

Thermocouple : W5%Re/W26%Re (type C) (type K on request)

Wafer temperature : max. 900-1200°C (depending on heater material and application)

Bakeout temperature : 250°C

Electrical contacts : copper-free contacts for metal heaters; water-cooled contacts for graphite heaters

Linear travel : 25mm standard, 30-50mm on request

Options : integrated main shutter (S), electrically insulated wafer holder with additional feedthrough for

bias voltage (B), tantalum wafer holder (T)