Valved GaP compound source

The VGCS is designed for growth of phosphide compounds in III-V-MBE. It has been readily approved in industrial applications. The fast and reproducible flux control using a valve allows the growth of phosphide-arsenide heterostructures with very sharp interfaces like quantum wells and superlattices. It is perfectly suited for applications in HEMTs, HBTs, GaAlInP laser diodes and other devices. GaInP/InP quantum dot lasers have been prepared. The large crucible size makes the VGCS well suited for MBE research and production systems

Features：

Produces pure P₂ species (P₂ / P₄>150)

Large crucible capacity of 420 cc

Reliable large cross-section cone valve

Fast, stable and reproducible flux control

Safe cell loading and operation

No hot cracker zone

Injector length and flux distribution

adjustable to ft most MBE systems